Void nucleation in thin HfO[sub 2] layer on Si

Miyata, Noriyuki; Nabatame, Toshihide; Horikawa, Tsuyoshi; Ichikawa, Masakazu; Toriumi, Akira
June 2003
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3880
Academic Journal
We examined void nucleation in a thin HfO[sub 2] film on Si at 820–920 °C in an ultrahigh vacuum. The clustering of mobile species on the HfO[sub 2] surface led to the opening of micron-scale voids containing Hf silicide. The incubation period observed for void nucleation exhibited transition of decomposition process with activation energies of 2.3 eV (<890 °C) and 11 eV (>890 °C). We propose that the former energy corresponds to the creation of mobile species and the latter to the decomposition of the HfO[sub 2] film under the cluster. © 2003 American Institute of Physics.


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