TITLE

Thickness-dependent stress effect in p-type metal–oxide–semiconductor structure investigated by substrate injection current

AUTHOR(S)
Hong, Chao-Chi; Liao, Wei-Jian; Hwu, Jenn-Gwo
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3916
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of oxide, Si wafer, and gate Al thicknesses on the substrate injection currents (J[sub sub]) of p-type metal–oxide–semiconductor structures with ultrathin oxides are studied. J[sub sub] is reported to be both trap-related (interface and Si bulk) and Si band gap-related (intrinsic carrier concentration). Both mechanisms have given rise to the stress near the Si/SiO[sub 2] interface. Current–voltage and capacitance–voltage characterizations reveal that J[sub sub] increases with oxide thickness, which is suggested to be dominated by the trap-related mechanism. A stronger dependence of J[sub sub] on a change in oxide thickness is observed for a thicker Si wafer, which is proposed to be mainly caused by the band gap-related mechanism. Furthermore, a thicker gate Al introduces a higher J[sub sub], which is proposed to be due to both the trap-related and the band gap-related mechanisms. © 2003 American Institute of Physics.
ACCESSION #
9885197

 

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