Observation of a scanning tunneling microscopy induced photocurrent during ballistic electron emission microscopy

Heller, E. R.; Pelz, J. P.
June 2003
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3919
Academic Journal
We report that a scanning tunneling microscope induced photocurrent (STM–PC) can occur during ballistic electron emission microscopy (BEEM) measurements on Schottky-barrier samples with typical efficiency of 10[sup -4]–10[sup -6] and apparent BEEM threshold slightly above the substrate semiconductor band gap. This STM–PC resembles normal BEEM current, and hence, can interfere with BEEM measurements of structures with intrinsically low signal and/or intrinsic BEEM threshold voltage larger than the substrate band gap. We discuss a simple test for the existence of STM–PC during BEEM measurements. © 2003 American Institute of Physics.


Related Articles

  • Direct control and characterization of a Schottky barrier by scanning tunneling microscopy. Bell, L. D.; Kaiser, W. J.; Hecht, M. H.; Grunthaner, F. J. // Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p278 

    Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a...

  • Scanning tunneling microscope study of electrical transport properties of nanoscale Schottky contacts between manganese silicide nanostructures and Si(111). Liu, Xiao-Yong; Zou, Zhi-Qiang; Sun, Li-Min; Li, Xu // Applied Physics Letters;7/22/2013, Vol. 103 Issue 4, p043116 

    The electrical transport properties of three types of manganese silicide nanocontacts, including tabular island/Si(111), nanowire/Si(111), and three-dimensional island/Si(111), are investigated by a scanning tunneling microscope with tip contacting the silicide islands. All current-voltage...

  • Analytic model for minority carrier effects in nanoscale Schottky contacts. Lifeng Hao; Bennett, P. A. // Journal of Applied Physics;Jul2010, Vol. 108 Issue 1, p014303 

    We present an analytic model for the current-voltage (I-V) behavior for a nanoscale Schottky contact, emphasizing the role of minority carriers. The minority carriers give rise to a surface recombination current that can strongly dominate the majority current flow throughout the bias range. The...

  • Poly(3-hexyl-thiophene) coil-wrapped single wall carbon nanotube investigated by scanning tunneling spectroscopy. Giulianini, Michele; Waclawik, Eric R.; Bell, John M.; Scarselli, Manuela; Castrucci, Paola; de Crescenzi, Maurizio; Motta, Nunzio // Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p143116 

    Scanning tunneling spectroscopy was performed on a (15,0) single wall carbon nanotube partially wrapped by poly(3-hexyl-thiophene). On the bare nanotube section, the local density of states is in good agreement with the theoretical model based on local density approximation and remarkably is not...

  • Ballistic electron emission microscopy study of barrier height inhomogeneties introduced in Au/n-... Detavernier, C.; Van Meirhaeghe, R.L. // Journal of Applied Physics;9/15/1998, Vol. 84 Issue 6, p3226 

    Highlights a study which used ballistic electron emission microscopy to determine the Schottky barrier heights' distribution over the contact area in Au/n-silicon diodes. Details on reactive ion etching; Information on the Gaussian distribution components; Methodology used to conduct the study;...

  • An inexpensive STM conversion to a BEEM. Zhang, Rong; Stefaniuk, Robert; Ivey, Douglas G. // Review of Scientific Instruments;Jul1995, Vol. 66 Issue 7, p3799 

    Presents an inexpensive modification to a conventional scanning tunneling microscope, converting it to a ballistic electron emission microscopy (BEEM). Factors affecting the performance of BEEM; Testing of the system on a thin Au metallization to (100) Si.

  • Rapid communicationPhotoelectron emission in femtosecond laser assisted scanning tunneling microscopy. Pfeiffer, W.; Sattler, F.; Vogler, S.; Gerber, G.; Grand, J.-Y.; M�ller, R. // Applied Physics B: Lasers & Optics;1997, Vol. 64 Issue 2, p265 

    Analyzes the photoelectron emission in femtosecond laser assisted scanning tunneling microscopy. Effect of the electronic bandwidth of the tunneling gap on time resolution; Application of the detection scheme at high laser fluence; Result of the substrate specific pump-probe effect in the...

  • Time-resolved current response of a nanosecond laser pulse illuminated STM tip. Jersch, J.; Demming, F.; Fedotov, I.; Dickmann, K. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 6, p637 

    Abstract. Time-resolved dependence of the transient current through a ns laser pulse illuminated scanning tunneling microscope (STM) tip/sample gap in tunneling mode and out of tunneling range is presented. A self-designed fast STM-preamplifier (bandwidth 35 MHz) allows one to resolve the fine...

  • Photoemission and STM, STS study of Cs/p-GaAs(110). Yamada, T.; Fujii, J.; Mizoguchi, T. // AIP Conference Proceedings;2001, Vol. 570 Issue 1, p908 

    Various stage of adsorbed Cs, i.e., one-dimensional (1D) lines, polygons and coherently c(4x4)-ordered polygons, on cleaved p-GaAs(110) are studied by scanning tunneling microscopy (STM) and scanning tunneling spectroscopies (STS) with an interest in relation to the photo-electron emission. It...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics