TITLE

Nonlocal resonant interaction between coupled quantum wires

AUTHOR(S)
Morimoto, T.; Iwase, Y.; Aoki, N.; Sasaki, T.; Ochiai, Y.; Shailos, A.; Bird, J. P.; Lilly, M. P.; Reno, J. L.; Simmons, J. A.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3952
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We study the transport in a system of coupled quantum wires and show evidence for a resonant interaction that occurs whenever one of them is biased close to pinch off. Measuring the conductance of one of the wires, as the width of the other is varied, we observe a resonant peak in the conductance that is correlated to the point at which the other wire pinches off. The origin of this interaction remains undetermined at present, although its characteristics appear consistent with predictions that a correlated many-body state should form in narrow wires as their conductance vanishes. © 2003 American Institute of Physics.
ACCESSION #
9885185

 

Related Articles

  • Monte Carlo simulation of phonon confinement in silicon nanostructures: Application to the determination of the thermal conductivity of silicon nanowires. Lacroix, David; Joulain, Karl; Terris, Damian; Lemonnier, Denis // Applied Physics Letters;9/4/2006, Vol. 89 Issue 10, p103104 

    The authors study the thermal conductivity of silicon nanowires by simulation of phonon motion and interactions through a dedicated Monte Carlo model. This model solves the Boltzmann transport equation, taking into account silicon acoustic mode dispersion curves and three phonon interactions...

  • Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions. Seonghoon Jin; Fischetti, Massimo V.; Ting-wei Tang // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p082103 

    Calculations based on the multisubband Boltzmann transport equation with relevant microscopic scattering mechanisms predict abrupt differential conductance fluctuations (kinks) in the drain current versus drain voltage curves of silicon nanowire transistors at room temperature. The kink...

  • Transport and optical response of single nanowires. Ruda, Harry; Salfi, Joe; Philipose, Usha; Saxena, Ankur; Kai Tak Lau; Tao Xu; Li Zhong; Christina de Souza; Aouba, Stephane; Suxia Yang; Ping Sun; Nair, Selvakumar; Fernandes, Carlos // Journal of Materials Science: Materials in Electronics;Jan2009 Supplement 1, Vol. 20, p480 

    Semiconductor nanowires exhibit interesting optical and electronic properties which makes them useful in device applications. An important advantage of nanowires over other low dimensional structures is that nanowires can function as both active elements and as interconnects. Hence, it is...

  • On the conductance and the conductivity of disordered quantum wires. Haque, A.; Khondker, A. N. // Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p3876 

    Deals with a study which utilized the Keldysh formulation within the scope of the self-consistent Born approximation to estimate the conductance of the quantum wires averaged over the ensemble of the random impurities. Transport properties of disordered wires; Methodology of the study; Results...

  • A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus. Carrillo-Nuñez, H.; Magnus, Wim; Peeters, F. M. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p063708 

    A simplified quantum mechanical model is developed to investigate quantum transport features such as the electron concentration and the current flowing through a silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET). In particular, the electron concentration is extracted...

  • An acoustic and dimensional mismatch model for thermal boundary conductance between a vertical mesoscopic nanowire/nanotube and a bulk substrate. Prasher, Ravi; Tong, Tao; Majumdar, Arun // Journal of Applied Physics;Nov2007, Vol. 102 Issue 10, p104312 

    A theoretical model to calculate the thermal boundary conductance (Kapitza conductance) or, alternatively, thermal boundary resistance (Kapitza resistance) between a vertically grown mesoscopic nanowire/nanotube and a bulk substrate is presented. The thermal boundary resistance at the interface...

  • Thermal conductivity of tubular and core/shell nanowires. Prasher, Ravi // Applied Physics Letters;8/7/2006, Vol. 89 Issue 6, p063121 

    Analytical solution of the Boltzmann transport equation (BTE) for phonon transport in tubular and core-shell nanowire is obtained. Thermal conductivity calculated from the analytical solution of BTE is in excellent agreement with a recently reported numerical model [R. Yang et al., Nano Lett. 5,...

  • Microphotoluminescence study of individual suspended ZnO nanowires. Min Gao; Wenliang Li; Liu, Yang; Quan Li; Qing Chen; Lian-Mao Peng // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p113112 

    We report microphotoluminescence measurements on individually suspended ZnO nanowires attached to nanometer-sized metal tips. This procedure avoids the possible influence of the substrate and enables comprehensive optical, electrical, chemical, and morphological characterizations to be carried...

  • Phononic and structural response to strain in wurtzite-gallium nitride nanowires. Loh, G. C.; Teo, E. H. T.; Tay, B. K. // Journal of Applied Physics;May2012, Vol. 111 Issue 10, p103506 

    Gallium nitride (GaN) nanowires exist in a myriad of cross-sectional shapes. In this study, a series of classical molecular dynamics simulations is performed to investigate the strain-phononics-structure relationship in rectangular and triangular wurtzite-GaN nanowires. The thermal conductivity...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics