Photovoltaic effect on differential capacitance profiles of low-energy-BF[sub 2][sup +]-implanted silicon wafers

Chang, M. N.; Chen, C. Y.; Pan, F. M.; Lai, J. H.; Wan, W. W.; Liang, J. H.
June 2003
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3955
Academic Journal
Using scanning capacitance microscopy (SCM), we have studied the photovoltaic effect on differential capacitance (dC/dV) signals of low-energy-BF[sub 2][sup +]-implanted silicon wafers. The surface photovoltage induced by the stray light of the atomic force microscope laser beam leads to distorted dC/dV profiles and hence perturbs the contrast of SCM images. Due to the photovoltaic effect on the junction region, the observed junction image also exhibits a narrower junction width. According to this study, the photovoltaic effect not only significantly affects the dC/dV signals but also deteriorates the accuracy of junction characterization, in particular for ultrashallow junctions and lower band-gap semiconductors. © 2003 American Institute of Physics.


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