TITLE

Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsine

AUTHOR(S)
Abdalla, M. I.; Kenneson, D. G.; Powazinik, W.; Koteles, E. S.
PUB. DATE
July 1990
SOURCE
Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p494
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the growth by low-pressure metalorganic vapor phase epitaxy of lattice-matched InGaAs on InP substrates using tertiarybutylarsine as the arsenic source. The grown layers are uniform in composition and are consistently n type with low background carrier concentrations (2–3×1015/cm3). Room-temperature mobility as high as 11 200 cm2/V s with a corresponding 77 °K mobility of 57 000 cm2/V s are measured. Photoluminescence gave a strong narrow peak with a full width half maximum=3.1 meV, with no evidence of carbon incorporation.
ACCESSION #
9834476

 

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