High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

Arent, D. J.; Brovelli, L.; Jäckel, H.; Marclay, E.; Meier, H. P.
May 1990
Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p1939
Academic Journal
Strained single quantum well InGaAs/AlGaAs graded-index separate confinement heterostructure lasers have been grown by molecular beam epitaxy over nonplanar substrates. In addition to the low threshold currents provided in situ by lateral current blocking pn junctions obtained by plane-dependent doping of the amphoteric Si dopant, we observe variations in lasing wavelength, efficiency, and internal absorption as a function of the central (100) facet length. These variations are associated with increased indium composition in the strained quantum well which arises from incorporation of adatoms migrating from the low-growth (311)A side facets to the preferential growth (100) active area facets. Uncoated devices (750 μm×4 μm) have been found to have threshold currents as low as 6 mA (Jth=320 A/cm2) and exhibit single-mode behavior to greater than 100 mW at a wavelength of ∼1.0 μm when reflectivity modified (90%/10%).


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