TITLE

Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

AUTHOR(S)
Powell, J. A.; Larkin, D. J.; Matus, L. G.; Choyke, W. J.; Bradshaw, J. L.; Henderson, L.; Yoganathan, M.; Yang, J.; Pirouz, P.
PUB. DATE
April 1990
SOURCE
Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1442
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used Acheson and Lely α-SiC crystal substrates. We report the CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process. The single-crystal 6H-SiC films were grown on wafers oriented 3° to 4° off the (0001) plane toward the <1120> direction. The films, up to 12 μm thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.
ACCESSION #
9833920

 

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