TITLE

Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells

AUTHOR(S)
Asai, Hiromitsu; Kawamura, Yuichi
PUB. DATE
February 1990
SOURCE
Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p746
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a wavelength as short as 3.1 μm was obtained for the first time in uniformly Si-doped strained MQWs.
ACCESSION #
9833693

 

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