TITLE

AlxGa1-xAs-GaAs vertical-cavity surface-emitting laser grown on Si substrate

AUTHOR(S)
Deppe, D. G.; Chand, Naresh; van der Ziel, J. P.; Zydzik, G. J.
PUB. DATE
February 1990
SOURCE
Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p740
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Data are presented demonstrating room-temperature operation of AlxGa1-xAs-GaAs vertical-cavity surface-emitting lasers grown on Si substrates. The device structures are grown using molecular beam epitaxy and a grown-in quarter-wave AlAs-GaAs stack is used as the n-side reflector and a nonalloyed Ag dot used as the p-side reflector/contact. Pulsed threshold currents of ∼125 mA are obtained for a 15-μm-diam device.
ACCESSION #
9833675

 

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