TITLE

AlxGa1-xAs-GaAs vertical-cavity surface-emitting laser grown on Si substrate

AUTHOR(S)
Deppe, D. G.; Chand, Naresh; van der Ziel, J. P.; Zydzik, G. J.
PUB. DATE
February 1990
SOURCE
Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p740
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Data are presented demonstrating room-temperature operation of AlxGa1-xAs-GaAs vertical-cavity surface-emitting lasers grown on Si substrates. The device structures are grown using molecular beam epitaxy and a grown-in quarter-wave AlAs-GaAs stack is used as the n-side reflector and a nonalloyed Ag dot used as the p-side reflector/contact. Pulsed threshold currents of ∼125 mA are obtained for a 15-μm-diam device.
ACCESSION #
9833675

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics