Shubnikov–de Haas effect in thin epitaxial films of gray tin

Tu, L. W.; Wong, G. K.; Song, S. N.; Zhao, Z.; Ketterson, J. B.
December 1989
Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2643
Academic Journal
The transverse magnetoresistance and Hall effect have been studied for n-type gray tin epilayers grown on (001)CdTe substrates by the molecular beam epitaxy technique. Shubnikov–de Haas oscillations were observed in samples having Hall mobilities ≥104 cm2 /V s at low temperatures. Measurements were carried out using both the dc method and field modulation techniques in the temperature range from 1.2 to 10 K and in magnetic fields up to 10 T. Beat patterns were observed in the Shubnikov–de Haas spectra which we ascribe either to inhomogeneous doping, arising from the diffusion of Cd and Te from the substrate, or to quantization of the motion in the direction parallel to the film normal. The Shubnikov–de Haas carrier concentration of a 1210 Å film was determined to be nSdH =2.3×1017 cm-3, in good agreement with the Hall density.


Related Articles

  • Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs. Betko, J.; Morvic, M. // Journal of Applied Physics;12/1/1999, Vol. 86 Issue 11, p6243 

    Focuses on a study which analyzed the temperature dependent conductivity and Hall effect, as well as the transverse and longitudinal magnetoresistances in molecular-beam epitaxial gallium arsenide (GaAs) layers. Experimental details of the study; Experimental results; Conclusion.

  • Growth of Cd1-xZnxTe by molecular beam epitaxy. Feldman, R. D.; Austin, R. F.; Dayem, A. H.; Westerwick, E. H. // Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p797 

    Cd1-xZnxTe has been grown on GaAs substrates for compositions from x=0 to x=1. Binaries are shown to be of high quality, but x-ray rocking curve half-widths are extremely broad for most ternary compositions. Attempts to modify the interface yield only modest and uneven improvement in rocking...

  • Relaxation of stresses in CdTe layers grown by molecular beam epitaxy. Fontaine, C.; Gailliard, J. P.; Magli, S.; Million, A.; Piaguet, J. // Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p903 

    X-ray diffraction has been used to study CdTe layers grown by molecular beam epitaxy on Cd0.96Zn0.04Te or InSb substrates with either (111) or (001) orientation. The layers are elastically strained up to a critical thickness, above which misfit dislocations are generated. Our experimental...

  • Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy. Tsai, Jenn-Kai; Lo, Ikai; Chuang, Keng-Lin; Tu, Li-Wei; Huang, Ji-Hao; Hsieh, Chia-Ho; Hsieh, Kung-Yu // Journal of Applied Physics;1/15/2004, Vol. 95 Issue 2, p460 

    The surface morphology of GaN epitaxial films grown by plasma-assisted molecular-beam epitaxy has been investigated. We found that the surface morphology was sensitive to the N to Ga flux ratio (N/Ga) when grown at a high temperature (i.e., 788 °C). At that temperature, we did not observe...

  • Carrier-mediated ferromagnetism in single crystalline (Co, Ga)-codoped ZnO films. Zhonglin Lu; Hua-Shu Hsu; Yonhua Tzeng; Jung-Chun-Andrew Huang // Applied Physics Letters;4/13/2009, Vol. 94 Issue 15, p152507 

    Metallic (Co, Ga)-codoped ZnO single crystalline films have been grown by molecular beam epitaxy. Besides room temperature ferromagnetism, the anomalous hall effect (AHE) due to spin-orbit interaction was also found. The small AHE signals match quantitatively with the magnetic hysteresis and can...

  • High-quality InN films on MgO (100) substrates: The key role of 300 in-plane rotation. Garc&ıacute;a, V. D. Compeán; Hinostroza, I. E. Orozco; Echavarr&ıacute;a, A. Escobosa; Luna, E. López; Rodríguez, A. G.; Vidal, M. A. // Applied Physics Letters;5/12/2014, Vol. 104 Issue 19, p1 

    High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection...

  • An alternate route to giant magnetoresistance in MBE-grown Co–Cu superlattices (invited). Clarke, Roy; Barlett, Darryl; Tsui, Frank; Chen, Baoxing; Uher, Ctirad // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6174 

    Provides information on a study that presented an alternative description of the giant magnetoresistance in (111) cobalt-copper molecular beam epitaxy samples. Details on sample growth and characterization; Results and discussion.

  • Large positive magnetoresistance in Cr/Ag/Cr trilayers. Verbanck, G.; Temst, K. // Applied Physics Letters;3/17/1997, Vol. 70 Issue 11, p1477 

    Examines the large positive magnetoresistance (LPMR) effects in epitaxial trilayers grown by molecular beam epitaxy. Measurement of the LPMR curves at different temperatures to show a scaling behavior typical for electron transport; Significance of LPMR arising from scattering of the conduction...

  • Colossal magnetoresistance magnetic tunnel junctions grown by molecular-beam epitaxy. O'Donnell, J.; Andrus, A. E.; Oh, S.; Colla, E. V.; Eckstein, J. N. // Applied Physics Letters;4/3/2000, Vol. 76 Issue 14 

    Using molecular-beam-epitaxy growth techniques, we have synthesized ferromagnet/insulator/ferromagnet trilayer heterostructures with the "colossal" magnetoresistance material La[sub 1-x]Sr[sub x]MnO[sub 3] as the ferromagnet. These trilayer films were fabricated into magnetic tunnel junctions...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics