TITLE

Growth of single-crystal metastable (GaAs)1-x(Si2)x alloys on GaAs and (GaAs)1-x(Si2)x/GaAs strained-layer superlattices

AUTHOR(S)
Mei, D. H.; Kim, Y.-W.; Lubben, D.; Robertson, I. M.; Greene, J. E.
PUB. DATE
December 1989
SOURCE
Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2649
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial zinc blende structure metastable (GaAs)1-x(Si2)x alloys have been grown with 00.12 exhibited increasing evidence of interfacial defects associated with lattice strain when grown on GaAs. However, defect-free alloys with x up to 0.3 were obtained using (GaAs)1-x(Si2)x/GaAs strained-layer superlattice buffer layers to provide a better lattice match.
ACCESSION #
9833382

 

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