TITLE

Conformal vapor phase epitaxy

AUTHOR(S)
Pribat, D.; Karapiperis, L.; Collet, C.
PUB. DATE
December 1989
SOURCE
Applied Physics Letters;12/11/1989, Vol. 55 Issue 24, p2544
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel technique of shaped crystal growth from the vapor is presented, which we call conformal vapor phase epitaxy. Using selective epitaxy as a main ingredient, we have obtained a conformal Si single-crystal growth between two SiO2 films. Since vertical growth is physically impeded by a SiO2 cap, lateral to vertical growth ratios (overgrowth ratios) can be controlled at will. Using a standard chemical vapor deposition reactor, submicron thick (100)Si layers have been laterally grown with a totally controlled overgrowth ratio >20.
ACCESSION #
9833349

 

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