InGaP/GaAs superlattices grown by gas-source molecular beam epitaxy

Lee, H. Y.; Crook, M. D.; Hafich, M. J.; Quigley, J. H.; Robinson, G. Y.; Li, D.; Otsuka, N.
November 1989
Applied Physics Letters;11/27/1989, Vol. 55 Issue 22, p2322
Academic Journal
Lattice-matched InGaP/GaAs superlattices have been grown by gas-source molecular beam epitaxy. High-resolution images obtained with transmission electron microscopy reveal the superlattices to be free of dislocations and to exhibit smooth interfaces of only 1–2 monolayers in width. Double crystal x-ray diffraction studies indicate that the narrow interfacial regions are locally strained as a result of the growth sequence during gas-source molecular beam epitaxy.


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