TITLE

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

AUTHOR(S)
Kim, Jae-Hoon; Lang, Robert J.; Radhakrishnan, Gouri; Katz, Joseph; Narayanan, Authi A.; Craig, Richard R.
PUB. DATE
October 1989
SOURCE
Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1492
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40% without facet coating. The threshold current density was 550 A/cm2 for a cavity length of 500 μm. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6°. Threshold current densities as low as 250 A/cm2 were obtained for lasers on GaAs substrates.
ACCESSION #
9832931

 

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