TITLE

Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

AUTHOR(S)
Chen, W. K.; Chen, J. C.; Anthony, L.; Liu, P. L.
PUB. DATE
September 1989
SOURCE
Applied Physics Letters;9/4/1989, Vol. 55 Issue 10, p987
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass transport limited in the temperature range of 420–580 °C. It is kinetic controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.
ACCESSION #
9832568

 

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