TITLE

Optical characterization of stress in narrow GaAs stripes on patterned Si substrates

AUTHOR(S)
De Boeck, J.; Deneffe, K.; Christen, J.; Arent, D. J.; Borghs, G.
PUB. DATE
July 1989
SOURCE
Applied Physics Letters;7/24/1989, Vol. 55 Issue 4, p365
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence (PL) and spatially resolved cathodoluminescence (CL) techniques are used to characterize the stress in narrow GaAs stripes grown on Si platforms. Since no overgrowth occurs over the recess edges, the GaAs stripes are grown unconstrained along one dimension. A duplication of the optical transitions is found in the PL spectrum from a region containing embedded GaAs and stripes. The peaks in the high-energy shoulders of the PL spectrum are identified by CL measurements with high spatial resolution as the luminescence contribution of the GaAs stripes. They are submitted to lower internal stress values. A study on the geometrical dependence of the strain regime shows that a nonuniform biaxial strain field with a dominant longitudinal component is present in the stripes. The uniform biaxial strain, found in GaAs on Si (001), is present at stripe intersections.
ACCESSION #
9832082

 

Related Articles

  • Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates. Pritchard, R. E.; Oulton, R. F.; Stavrinou, P. N.; Parry, G.; Williams, R. S.; Ashwin, M. J.; Neave, J. H.; Jones, T. S. // Journal of Applied Physics;7/1/2001, Vol. 90 Issue 1, p475 

    Arrays of GaAs pyramids with square (001) bases of length 1-5 μm have been fabricated by molecular beam epitaxy regrowth on pre-patterned GaAs (001) substrates. The optical properties of the pyramid faces have been studied by microreflection and microtransmission imaging measurements with...

  • Nonlinear optical absorption and temporal response of arsenic- and oxygen-implanted GaAs. Lederer, M.J.; Luther-Davis, B.; Tan, H.H.; Jagadish, C.; Haiml, M.; Siegner, U.; Keller, U. // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p1993 

    Measures the nonlinear optical absorption of arsenic and oxygen implanted epitaxial gallium arsenide (GaAs) for a range of ion doses and annealing temperatures. Response time; Metal organic vapor deposition; Performance of the structures as modulators; Nonbleachable losses.

  • Influence of (001) vicinal GaAs substrates on the optical properties of defects in... Zhang, M.H.; Li, Q. // Applied Physics Letters;7/26/1999, Vol. 75 Issue 4, p504 

    Reports on a photoluminescence (PL) spectroscopy and carrier lifetime measurement to characterize the optical properites of defects in the low-temperature (LT) gallium arsenide. Sets of samples grown by molecular beam epitaxy; Different PL spectra and carrier lifetimes attributed to structures...

  • Mechanism for low-temperature photoluminescence in GaNas/GaAs structures grown by molecular-beam... Buyanova, I.A.; Chen, W.M. // Applied Physics Letters;7/26/1999, Vol. 75 Issue 4, p501 

    Studies the mechanism for low-temperature photoluminescence emissions in gallium arsenide structures by molecular beam epitaxy. Major characteristic properties identical in both structures and epilayers; Dependence on the excitation power and measurement temperature.

  • Imaging near-contact transport in the planar-collector geometry for a Schottky contact on... Record, K. A.; Palmieri, D. R. // Applied Physics Letters;12/13/1999, Vol. 75 Issue 24, p3829 

    Combines variable temperature electron beam induced current (EBIC) and cathodoluminescence to image electric fields and charge transport for a Schottky contact on high purity epitaxial gallium arsenide in the planar-collector geometry. Deflection effects' domination of near-contact EBIC signal;...

  • Optical properties of epitaxial ZnMnTe and ZnMgTe films for a wide range of alloy compositions. Liu, X.; Bindley, U.; Sasaki, Y.; Furdyna, J. K. // Journal of Applied Physics;3/1/2002, Vol. 91 Issue 5, p2859 

    Zn[sub l-x]Mn[sub x]Te and Zn[sub l-x]Mg[sub x]Te ternary wide-gap semiconductor alloys were grown by molecular beam epitaxy on (100) GaAs substrates over a wide range of compositions (0≤x≤0.75 and 0 ≤ x ≤ 0.67, respectively). Values of the band gap were measured by...

  • Planar micro- and nano-patterning of GaN light-emitting diodes: Guidelines and limitations. Herrnsdorf, Johannes; Enyuan Xie; Watson, Ian M.; Laurand, Nicolas; Dawson, Martin D. // Journal of Applied Physics;2014, Vol. 115 Issue 8, p1 

    The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing...

  • Optical properties of serpentine superlattices on GaAs vicinal substrates for quantum wire laser.... Jong Chang Yi; Dagli, Nadir // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p219 

    Investigates the optical properties of serpentine superlattices (SSL) on gallium arsenide vicinal substrates. Examination of the natures miniband structure intermixing; Investigation of the effects of imperfect aluminum segregation between gallium arsenide wires and aluminum gallium arsenide...

  • Characterization of Ca[sup +] ion-implanted GaAs by photoluminescence. Hong-Lie Shen; Makita, Yunosuke // Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1427 

    Characterizes optical properties of calcium (Ca) ion-implanted gallium arsenide (GaAs) by photoluminescence (PL). Emissions produced by Ca incorporation into GaAs; Results of the PL spectra of Ca concentration dependence and excitation intensity dependence; Demonstration of Ca as an acceptor...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics