Erratum: Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates [Appl. Phys. Lett. 54, 1687 (1989)]

Posthill, J. B.
July 1989
Applied Physics Letters;7/24/1989, Vol. 55 Issue 4, p411
Academic Journal
Presents a corrected version of a typographical error in the article 'Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates,' published in a 1989 issue of 'Applied Physics Letters' journal. Correction on the rotation angle between the two variants of (111) GaAs heteroepitaxy on (1012) sapphire.


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