TITLE

Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs

AUTHOR(S)
Dang, Le Si; Cibert, J.; Gobil, Y.; Saminadayar, K.; Tatarenko, S.
PUB. DATE
July 1989
SOURCE
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p235
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Residual strains in (001) and (111) thick layers of CdTe and ZnTe grown by molecular beam epitaxy on nominal or slightly tilted (001) GaAs have been investigated by reflectance, photoluminescence, and optical pumping experiments at tow temperature. Strains are found to be independent of both layer orientations and thicknesses in the range 2-6 µm. They are compressive ≈ -0.5 × 10[sup -3] in CdTe and tensile ≈ 10[sup -3] in ZnTe. Estimates of thermal expansion effects show that they are the dominant cause of residual strains in these heterostructures.
ACCESSION #
9832019

 

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