TITLE

Steric hindrance effects in atomic layer epitaxy of InAs

AUTHOR(S)
Jeong, Weon G.; Menu, E. P.; Dapkus, P. D.
PUB. DATE
July 1989
SOURCE
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p244
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Atomic layer epitaxy of InAs is demonstrated. Saturation of the growth rate of one monolayer per cycle is achieved at a growth temperature of 340 °C. The growth rate is found to be a strong function of trimethylindium exposure times for the same total amount of reactant exposure per cycle. There is a threshold exposure time to achieve a growth rate of one monolayer per cycle, For shorter exposure time, the growth rate saturates to sub-one monoayer per cycle. The dependence of growth rate on exposure time is explained by steric hindrance effects of the initial adsorbate.
ACCESSION #
9832011

 

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