Steric hindrance effects in atomic layer epitaxy of InAs

Jeong, Weon G.; Menu, E. P.; Dapkus, P. D.
July 1989
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p244
Academic Journal
Atomic layer epitaxy of InAs is demonstrated. Saturation of the growth rate of one monolayer per cycle is achieved at a growth temperature of 340 °C. The growth rate is found to be a strong function of trimethylindium exposure times for the same total amount of reactant exposure per cycle. There is a threshold exposure time to achieve a growth rate of one monolayer per cycle, For shorter exposure time, the growth rate saturates to sub-one monoayer per cycle. The dependence of growth rate on exposure time is explained by steric hindrance effects of the initial adsorbate.


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