TITLE

Numerical study of nonequilibrium electron transport in AlGaAs/GaAs heterojunction bipolar transistors

AUTHOR(S)
Beton, P. H.; Levi, A. F. J.
PUB. DATE
July 1989
SOURCE
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p250
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have simulated numerically the dynamics of nonequilibrium electron transport in n-p-n AlGaAs/GaAs heterojunction bipolar transistors. We show that collector transit time is intimately related to base transport dynamics and high p-type carrier concentration in a thin base improves device performance. However, even for a very thin collector depletion region, the small Γ-X intervalley energy separation in GaAs places severe constraints on efficient collector transport.
ACCESSION #
9832008

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics