Laser photochemical deposition of germanium-silicon alloy thin films

Burke, Hubert H.; Herman, Irving P.; Tavitian, Viken; Eden, J. Gary
July 1989
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p253
Academic Journal
Thin films of Ge-Si alloys were deposited by 193 nm photolysis of GeH[sub 4]/Si[sub 2]H[sub 6], gas mixtures using an ArF laser. For substrate temperatures below 350 °C, deposition occurred only with the laser present, while for temperatures above 400 °C, film growth was little influenced by laser photolysis and resembled conventional chemical vapor deposition (CVD). The Si/Ge ratio in the films was about three times the P[sub Si[sub 2]H[sub 6]]/P[sub GeH[sub 4]], ratio of reactant partia1 pressures for deposition in either the laser photolysis or the CVD regime. This result indicates that there is strong cross chemistry between silicon and germanium-bearing species in the gas phase. Film stoichiometry was measured by Auger analysis and Raman spectroscopy, with both methods leading to the same film composition.


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