TITLE

Growth of epitaxial NiSi2 on Si(111) at room temperature

AUTHOR(S)
Tung, R. T.; Schrey, F.
PUB. DATE
July 1989
SOURCE
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p256
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial type B NiSi[sub 2] thin layers have been grown at room temperature on Si (111). Deposition of a few monolayers of nickel followed by codeposition of NiSi[sub 2] has led to the growth of high quality single-crystal layers, with ion channeling χ[sub min] < 2%. No disorder was found at the interfaces of these layers. The topography of the original substrate has a predominant effect on the structure of line defects at the NiSi[sub 2] interface. Codeposition at room temperature os annealed silicide thin layers also led to the overgrowth of high quality NiSi[sub 2]. These results are suggestive of type B NiSi[sub 2] formation on Si (111) upon deposition of a few monolayers of nickel at room temperature.
ACCESSION #
9832004

 

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