Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

Mathine, D. L.; Durbin, S. M.; Gunshor, R. L.; Kobayashi, M.; Menke, D. R.; Pei, Z.; Gonsalves, J.; Otsuka, N.; Fu, Q.; Hagerott, M.; Nurmikko, A. V.
July 1989
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p268
Academic Journal
A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.


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