High-power disorder-defined coupled stripe AlyGa1-yAs-GaAs-InxGa1-xAs quantum well heterostructure lasers

Major, J. S.; Hall, D. C.; Guido, L. J.; Holonyak, N.; Gavrilovic, P.; Meehan, K.; Williams, J. E.; Stutius, W.
July 1989
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p271
Academic Journal
Data are presented describing continuous (cw) room-temperature laser operation of Al[sub y]Ga[sub 1 - y]As-GaAs-In[sub x]Ga[sub 1 - x]As quantum well heterostructure (QWH) phase-locked arrays. The ten-stripe arrays have 3 µm emitters, with emitter to emitter spacing of 4 µm, and are patterned onto the QWH crystal using a self-aligned Si-O impurity-induced layer disordering (IILD) procedure. The IILD process is devised to provide limited layer intermixing to ensure optical coupling (across ∼1 µm). The coupled stripe QWH lasers exhibit narrow twin-lobed far-field patterns that shrew unambiguously phase locking in the highest order supermode. The cw output power of the lasers (differential quantum efficiency 52%) is shown from threshold (∼75 mA) to over 280 mW (both facets, no optical coatings).


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