TITLE

Effects of stress on the electrical activation of implanted Si in GaAs

AUTHOR(S)
Vanasupa, L. S.; Deal, M. D.; Plummer, J. D.
PUB. DATE
July 1989
SOURCE
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p274
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of various plasma-enhanced chemical vapor deposition SIN[sub x] encapsulating films on the electrical activation of ion-implanted [sup 29]Si[sup +] in GaAs were investigated. Films inducing the most tensile stress in the GaAs resulted in the lowest activation efficiency and films inducing the most compressive resulted in the highest. The results suggest that ratio of donors to acceptors, Si[sub Ga]:Si[sub As], is a sensitive function of the stress state during the activation anneal.
ACCESSION #
9831994

 

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