Photoemission studies of the interfacial reactions between ZnS and anodic oxide film of HgCdTe

Jin, S.; Lau, W. M.
July 1989
Applied Physics Letters;7/17/1989, Vol. 55 Issue 3, p209
Academic Journal
The interfacial reactions of zinc sulphide (ZnS) on an anodic oxide film of mercury cadmium telluride (HgCdTe) have been studied by polar angle dependent x-ray photoelectron spectroscopy (XPS). It was found that the sputter deposition of ZnS reduced the oxidized tellurium of the anodic film at the interface. In addition, the XPS results show a high Zn/S ratio when the deposition is confined to a few monolayers. The ratio, however, decreases to unity for a thick film. The results indicate that zinc atoms sputtered from the ZnS target play an important role in the interfacial reactions between the deposited overlayer and the HgCdTe anodic oxide film.


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