Universal resputtering curve

Morgan, W. L.
July 1989
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p106
Academic Journal
The process of resputtering of material being sputter deposited onto a substrate is investigated via Monte Carlo simulations and simple analytical models. This resputtering comprises contributions from self-sputtering and from neutralized ions reflected from the target being sputtered. The results of these models are in reasonable agreement with recent measurements over a wide variety of gases and metal targets. When plotted versus a dimensionless mass parameter, the intrinsic resputtered fraction lies on a seemingly universal curve. The reason for this becomes clear through the development of the simple analytical models.


Related Articles

  • Monte Carlo calculation of the thermalization of atoms sputtered from the cathode of a sputtering discharge. Turner, G. M.; Falconer, I. S.; James, B. W.; McKenzie, D. R. // Journal of Applied Physics;5/1/1989, Vol. 65 Issue 9, p3671 

    Presents information on a study which used the Monte Carlo technique to simulate the thermalization of sputtered atoms in the filling or background gas within a planar sputtering discharge. Methodology of the study; Results and discussion.

  • Monte Carlo simulations of sputter atom transport in low-pressure sputtering: The effects of interaction potential, sputter distribution, and system geometry. Myers, A. M.; Doyle, J. R.; Ruzic, D. N. // Journal of Applied Physics;10/1/1992, Vol. 72 Issue 7, p3064 

    Presents a study of the various model assumptions in Monte Carlo simulations of low-pressure sputter-atom transport. Gas phase scattering; Sputter distribution.

  • Pattern formation and nonlinear evolution in alloy surfaces by ion-beam sputtering. Bharathi, M. S.; Ramanarayan, H.; Zhang, Y. W. // Applied Physics Letters;8/22/2011, Vol. 99 Issue 8, p083103 

    Nanoscale pattern formation on surfaces by ion beam sputtering is driven by the competition between the erosion and the diffusion processes. In alloys, these processes are component-dependent. We present a kinetic Monte Carlo model for sputtering of alloy surfaces which exhibits morphological...

  • Calculation of gas heating in a dc sputter magnetron. Kolev, I.; Bogaerts, A. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 9, p093301 

    The effect of gas heating in laboratory sputter magnetrons is investigated by means of numerical modeling. The model is two-dimensional in the coordinate space and three-dimensional in the velocity space based on the particle-in-cell–Monte Carlo collisions technique. It is expanded in a...

  • Molecular dynamics simulations of Cl+ etching on a Si(100) surface. Gou, F.; Neyts, E.; Eckert, M.; Tinck, S.; Bogaerts, A. // Journal of Applied Physics;Jun2010, Vol. 107 Issue 11, p113305 

    Molecular dynamics simulations using improved Tersoff–Brenner potential parameters were performed to investigate Cl+ etching of a {2×1} reconstructed Si(100) surface. Steady-state Si etching accompanying the Cl coverage of the surface is observed. Furthermore, a steady-state...

  • SHORTEST PATHS IN PROBABILISTIC GRAPHS. Frank, H. // Operations Research;Jul/Aug69, Vol. 17 Issue 4, p583 

    This paper considers the problem of finding shortest-path probability distributions in graphs whose branches are weighted with random lengths, examines the consequences of various assumptions concerning the nature of the available statistical information, and gives an exact method for computing...

  • Two-dimensional percolation phenomena of single-component linear homopolymer brushes. Norizoe, Yuki; Jinnai, Hiroshi; Takahara, Atsushi // Journal of Chemical Physics;2/7/2014, Vol. 140 Issue 5, p054904-1 

    Percolation phenomena of homopolymer brushes on a planar substrate are simulated using the molecular Monte Carlo method in 3 dimensions. The grafted polymers are isolated from each other at extremely low grafting density, whereas a continuous polymer layer covers the whole substrate when the...

  • Problems with fitting to the power-law distribution. Goldstein, M. L.; Morris, S. A.; Yen, G. G. // European Physical Journal B -- Condensed Matter;Oct2004, Vol. 41 Issue 2, p255 

    This short communication uses a simple experiment to show that fitting to a power law distribution by using graphical methods based on linear fit on the log-log scale is biased and inaccurate. It shows that using maximum likelihood estimation (MLE) is far more robust. Finally, it presents a new...

  • Calculation of sputtering rate by a Monte Carlo method. Hsieh, J. H.; Li, C. // Journal of Materials Science Letters;Aug2003, Vol. 22 Issue 16, p1125 

    The article presents an approach of combining a sputtering model and Monte Carlo simulation which is proposed to calculate the sputtering rate during a plasma-assisted process. This approach is proved to be satisfactory by comparing the calculated sputtering rates with some experimental results...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics