TITLE

Grain growth and size distribution in ion-irradiated chemical vapor deposited amorphous silicon

AUTHOR(S)
Spinella, C.; Lombardo, S.; Campisano, S. U.
PUB. DATE
July 1989
SOURCE
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The amorphous to polycrystal transition in chemical vapor deposited (CVD) amorphous silicon has been studied at 450 °C under Kr ion beam irradiation. The average grain size increases linearly with the ion dose, and the grain size distribution is very narrow compared to thermally grown grains. These results are consistent with the presence of crystal seeds in CVD material. All these seeds can grow simultaneously under ion beam irradiation. For layers completely preamorphized by Ge+ implantation, no ion beam induced nucleation is observed.
ACCESSION #
9831954

 

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