Electron beam lithography using surface reactions with ClF3

Matsui, Shinji
July 1989
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p134
Academic Journal
Direct writing onto poly(methylmethacrylate) (PMMA) resist has been demonstrated by electron beam induced surface reaction using a ClF3 gas source. The electron beam stimulated etched depth for PMMA resist is proportional to the electron dose. Etched depth profile control has been demonstrated by changing doses. A 0.5 μm linewidth pattern has been fabricated at a 2×10-3 C/cm2 dose.


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