TITLE

Fast anisotropic etching of silicon in an inductively coupled plasma reactor

AUTHOR(S)
Perry, A. J.; Boswell, R. W.
PUB. DATE
July 1989
SOURCE
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p148
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A 13.56 MHz rf inductively coupled diffusion plasma confined by a weak magnetic field is shown to produce high etch rates and high plasma densities. With a substrate bias of -160 V and 1 mTorr of pure SF6, silicon has been etched anisotropically at a rate of 0.7 μm min-1 with a selectivity to SiO2 of about 5.
ACCESSION #
9831935

 

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