Capture cross section of Si-SiO2 interface states generated during electron injection

Vuillaume, D.; Bouchakour, R.; Jourdain, M.; Bourgoin, J. C.
July 1989
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p153
Academic Journal
The evolution of the capture cross section of the Si-SiO2 interface states is analyzed when metal-oxide-semiconductor capacitors are stressed by Fowler–Nordheim injection of electrons from the n-type substrate. The capture cross sections of the energy distribution of the states are measured by a trap filling method using deep level transient spectroscopy. We found that the capture cross sections of near-midgap states increase by a factor 10, while they remain unchanged for the states localized near the conduction-band edge. The capture cross sections are temperature dependent and their associated activation energies increase with the stress from 30 to 100 meV. The exponential prefactor in the temperature-dependence law of the capture cross section is increased from 10-16 to 10-14 cm2 , and we suggest that the Fowler–Nordheim degradation induces new interface states of donor type in the upper part of the silicon band gap.


Related Articles

  • Transverse spectra of radiation processes in a medium. Zakharov, B. G. // JETP Letters;8/10/99, Vol. 70 Issue 3, p176 

    A formalism is developed for evaluation of the transverse momentum dependence of the cross sections of radiation processes in a medium. The analysis is based on the light-cone path integral approach to the induced radiation. The results are applicable in both QED and QCD. � 1999 American...

  • Zero electron kinetic energy spectroscopy of Au-6. Gantefor, G. F.; Cox, D. M.; Kaldor, A. // Journal of Chemical Physics;3/15/1992, Vol. 96 Issue 6, p4102 

    Zero electron kinetic energy (ZEKE) spectroscopy and photodetachment cross section measurements have been carried out on Au-6. The transition frequencies of ZEKE peaks and resonance peaks are nearly identical, consistent with the proposal that the excited negative ion of Au6 has a geometry quite...

  • (n,xn γ) reaction cross section measurements for (n,xn) reaction studies. Kerveno, Maëlle; Bacquias, Antoine; Borcea, Catalin; Dessagne, Philippe; Drohé, Jean-Claude; Nankov, Nikolay; Nyman, Markus; Negret, Alexandru; Plompen, Arjan; Rouki, Chariklia; Rudolf, Gérard; Stanoiu, Mihai; Thiry, Jean-Claude // EPJ Web of Conferences;2013, Issue 42, p01005-p.1 

    In the context of improvement of nuclear data bases for future nuclear re- actor researches, we study (n,xn) reactions experimentally with the help of the (n,xn ) technique. The experiments are performed at the GELINA facility which delivers a pulsed, white neutron beam. Several measurement...

  • Absolute absorption cross sections of gas phase C60 at 600 °C. Brady, Brian B.; Beiting, Edward J. // Journal of Chemical Physics;9/1/1992, Vol. 97 Issue 5, p3855 

    The absorption cross section of gas phase C60 is measured between 300 and 400 nm at a temperature of 600 °C. The spectrum showed a peak blue shifted from the absorption spectrum of the solid phase.

  • Optical capture cross sections of palladium in silicon. Rubio, E.; Vicente, J.; Jaraiz, M.; Arias, J.; Bailón, L.; Barbolla, J. // Journal of Applied Physics;1/1/1991, Vol. 69 Issue 1, p298 

    Presents a study which measured the optical electron and hole capture cross sections of the deep levels associated to palladium in silicon using constant-capacitance deep level optical spectroscopy and optical admittance spectroscopy. Principles pertaining to the techniques in spectroscopy;...

  • Influence of the shape of the cross section of a plasma-dielectric interface on the dispersion properties of high-frequency azimuthal surface modes. Girka, V.; Girka, I.; Pavlenko, I. // Plasma Physics Reports;Feb2012, Vol. 38 Issue 2, p126 

    Theoretical study of the propagation of a packet of surface electromagnetic surface waves with a zero axial wavenumber in a circular-cross-section cylindrical metal waveguide within the frequency range that is higher than upper hybrid resonance is carried out. The waveguide is partially filled...

  • Steady-state and transient capacitance of a p-n junction in the presence of high density of deep levels. Eron, Murat // Journal of Applied Physics;7/15/1985, Vol. 58 Issue 2, p1064 

    Presents a study that analyzed static and transient capacitance of a n[sup+]-p junction when a large density of deep levels are present. Key function of transient capacitance measurements; Error in treating the depletion width of the majority carriers and the distance from the junction through...

  • Comment on: 'Random telegraph signals arising from fast interface states in.... Uren, M.J.; Ming-Horn Tsai // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1443 

    Comments on the mensuration of random telegraph signals (RTS) from fast silicon-silicon oxide interface states from slow states. Use of high sampling rates; Features of RTS published earlier; Description of interface states with common chemical nature and environment.

  • Direct SiO[sub 2]/beta-SiC(100)3x2 interface formation from 25 degree Centigrade to 500 degree.... Semond, F.; Douillard, L. // Applied Physics Letters;4/8/1996, Vol. 68 Issue 15, p2144 

    Examines direct silicon dioxide/beta-silicon carbon interface formation at 25 degrees to 500 degrees Centigrade. Investigation by core level and valence band photoemission spectroscopies; Significance of low molecular oxygen exposures to surface reconstruction; Enhancement of silicon dioxide...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics