Influence of the DX center on the capacitance-voltage characteristics of δ-doped GaAs

Zrenner, A.
July 1989
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p156
Academic Journal
Capacitance-voltage (C-V) profiles are calculated self-consistently for δ-doped GaAs(Si) at kT=25 meV. Existing experimental data can only be explained if charge transfer to the DX center, which acts as an electron trap in the conduction band, is included. The depth resolution of C-V measurements is strongly enhanced when the DX center is occupied.


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