Far-infrared photovoltaic effect in a Landau level diode

Liu, C. T.; Kane, B. E.; Tsui, D. C.; Weimann, G.
July 1989
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p162
Academic Journal
We have investigated the far-infrared (FIR) photoresponse of a Landau level diode. A negative photovoltaic current is observed. It results from carriers generated by cyclotron resonance transitions in the two-dimensional depletion region at the gate edge of the device and subsequently swept out of the depletion region by the strong built-in electric field. The potential use of this device as a tunable FIR photodetector is discussed.


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