Below-band-gap photon recycling in AlxGa1-xAs

Bradshaw, J. L.; Devaty, R. P.; Choyke, W. J.; Messham, R. L.
July 1989
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p165
Academic Journal
A long minority-carrier diffusion length and the transmission of Alx Ga1-x As luminescence through Alx Ga1-x As layers are identified as two processes causing the excitation of GaAs spectra through thick Alx Ga1-x As layers, as well as contributing to enhancements in low-temperature photoluminescence intensity observed in Alx Ga1-x As layers without GaAs substrates. A simple model for intensity enhancement due to below-band-gap photon recycling is introduced to explain the observed enhancements. Some features that uniquely distinguish below-band-gap photon recycling from the better known room-temperature process are presented.


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