Observation of electron resonant tunneling in a lateral dual-gate resonant tunneling field-effect transistor

Chou, S. Y.; Allee, D. R.; Pease, R. F. W.; Harris, J. S.
July 1989
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p176
Academic Journal
A new lateral resonant tunneling field-effect transistor (LARTFET) has been fabricated using molecular beam epitaxy and ultrahigh-resolution electron beam lithography. The LARTFET has two 80-nm-long gate electrodes separated by 100 nm. The dual gates create double potential barriers in the channel and a quantum well in between. Conductance oscillations are observed, which, for the first time, indicate electron resonant tunneling through the energy states in a lateral double-barrier quantum well formed electrostatically. Furthermore, after illumination, two additional negative transconductance peaks are observed. These additional peaks may be related to electron resonant tunneling through the donor-related deep levels in silicon-doped Al0.35Ga0.65As .


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