Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation

Bryan, R. P.; Coleman, J. J.; Miller, L. M.; Givens, M. E.; Averback, R. S.; Klatt, J. L.
July 1989
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p94
Academic Journal
Data are presented on stripe geometry AlGaAs-GaAs graded barrier quantum well heterostructure lasers formed by MeV oxygen implantation and annealing. Low-dose implants are found to suppress lateral carrier diffusion but do not result in compositional disordering. High-dose implants form both a semi-insulating and a compositionally disordered region leading to index-guided buried-heterostructure laser operation. However, the concentration of oxygen which spreads laterally under the implantation mask during high-dose implants is sufficient to partially compensate the stripe region for narrow stripe widths and thereby significantly increases the threshold current.


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