TITLE

High doping of phosphorus in Si using gas source molecular beam epitaxy

AUTHOR(S)
Hirayama, Hiroyuki; Tatsumi, Toru
PUB. DATE
July 1989
SOURCE
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p131
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Phosphorus doping using PH3 in gas source Si molecular beam epitaxy was studied. High phosphorus doping up to 2×1020 cm-3 was successfully achieved. The phosphorus concentration in the epitaxial layer was proportional to the PH3 flow rate. Moreover, selective growth of the phosphorus-doped layer was possible. The p-n diode, which consisted of a selectively grown phosphorus-doped layer, a p--Si (100) substrate, and a SiO2 sidewall, showed a normal I-V characteristic.
ACCESSION #
9831880

 

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