Optical characterization of nonuniform electric fields in multiple quantum well diodes

Little, J. W.; Leavitt, R. P.; Ovadia, Shlomo; Lee, Chi H.
July 1989
Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p173
Academic Journal
Low-temperature photocurrent and photoluminescence spectroscopies have been used to quantify the effects of electric field nonuniformities (on the order of 100 kV/cm) within the ∼1-μm-thick intrinsic regions of GaAs/AlGaAs multiple quantum well p-i-n photodiodes. The smearing out of excitonic spectral features due to nonuniform fields agrees well with the results of calculations performed using a single-band envelope-function approximation together with a standard depletion model for a p-/n+ junction.


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