Reduction of Be diffusion in GaAs by migration-enhanced epitaxy

Tadayon, Bijan; Tadayon, Saied; Schaff, W. J.; Spencer, M. G.; Harris, G. L.; Tasker, P. J.; Wood, C. E. C.; Eastman, L. F.
July 1989
Applied Physics Letters;7/3/1989, Vol. 55 Issue 1, p59
Academic Journal
Be-doped GaAs layers were grown by the migration-enhanced epitaxy (MEE) method at 300 °C. The MEE layers showed practically no electrical activation. Rapid thermal annealing on the MEE layers resulted in mobility and hole concentration comparable to those of conventional molecular beam epitaxy (MBE) layers grown at 600 °C. Secondary-ion mass spectroscopy showed that the Be diffusion in annealed MEE layers was much smaller than that in conventional MBE layers, especially for highly doped layers. Raman spectroscopy and 4 K photoluminescence were also performed. The MEE method can replace the conventional MBE method for device applications which require high hole concentration with small diffusion.


Related Articles

  • Surface effect-induced fast Be diffusion in heavily doped GaAs grown by molecular-beam epitaxy. Pao, Yi-Ching; Hierl, Tom; Cooper, Tom // Journal of Applied Physics;7/1/1986, Vol. 60 Issue 1, p201 

    Presents a study that examined the rapid diffusion of beryllium (Be) in heavily doped gallium arsenide epilayers grown by molecular-beam epitaxy. Use of van der Pauw measurements; Concentration dependence of the Be diffusion; Existence of a discrepancy at high doping level; Determination of...

  • Beryllium diffusion in GaInAs grown by molecular beam epitaxy. Scott, E. G.; Wake, D.; Spiller, G. D. T.; Davies, G. J. // Journal of Applied Physics;12/1/1989, Vol. 66 Issue 11, p5344 

    Presents a study which examined the diffusion of beryllium (Be) buried beryllium-doped in gallium arsenide (GaAs). Details on studies on the anomalous distribution of Be at abrupt doping profiles in GaAs, GaAlAs and GaInAs; Materials and methods used; Result of the growth of the junction...

  • Silicon-doping level dependent diffusion of Be in AlGaAs/GaAs quantum well lasers. Swaminathan, V.; Chand, N.; Geva, M.; Anthony, P. J.; Jordan, A. S. // Journal of Applied Physics;11/15/1992, Vol. 72 Issue 10, p4648 

    Focuses on a study which investigated beryllium diffusion during molecular beam epitaxial growth of gallium arsenide/aluminum gallium arsenide graded index separate confinement heterostructure laser structures using secondary ion mass spectrometry. Information on molecular beam epitaxy;...

  • Electrical and structural properties of Be- and Si-doped low-temperature-grown GaAs. Atique, N.; Harmon, E. S; Chang, J. C. P.; Woodall, J. M.; Melloch, M. R.; Otsuka, N. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1471 

    Discusses a study on the electrical and structural properties of beryllium and silicon-doped low-temperature grown gallium arsenide. Introduction to molecular beam epitaxy; Experimental setup; Results and discussion.

  • Modeling the diffusion of implanted Be in GaAs. Hu, J. C.; Deal, M. D.; Plummer, J. D. // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1606 

    Features a study that modeled the diffusion of implanted beryllium (Be) in liquid-encapsulated Czochralski gallium arsenide (GaAs) samples using SUPREM-IV.GS, a simulator for GaAs and silicon processing technology. Simulation of the high Be diffusivity, the uphill diffusion and the...

  • Diffusion mechanism of zinc and beryllium in gallium arsenide. Yu, S.; Tan, T. Y.; Gösele, U. // Journal of Applied Physics;3/15/1991, Vol. 69 Issue 6, p3547 

    Focuses on a study which described several features associated with zinc (Zn) and beryllium diffusion in gallium arsenide substrates and superlattices. Dependence of the Zn solubility upon the pressures of the arsenic and Zn vapor phases; Square power-law dependence of the Zn diffusivity on its...

  • Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si. Deppe, D. G.; Holonyak, N.; Hsieh, K. C.; Nam, D. W.; Plano, W. E.; Matyi, R. J.; Shichijo, H. // Applied Physics Letters;5/23/1988, Vol. 52 Issue 21, p1812 

    Data are presented showing that low-temperature Zn diffusion (680 °C) is effective in reducing the dislocation density in epitaxial GaAs grown on Si. The GaAs-on-Si is analyzed using both cross-sectional and plan-view transmission electron microscopy. For comparison, simple thermal annealing...

  • Defect-related Si diffusion in GaAs on Si. Freundlich, A.; Leycuras, A.; Grenet, J. C.; Grattepain, C. // Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2635 

    Preferential diffusion channels of silicon are evidenced in GaAs grown by metalorganic vapor phase epitaxy on Si(100). The density of these diffusion channels is found to be consistent with the measured dislocation density. In addition, combining scanning electron microscopy and x-ray...

  • Control of Be diffusion in molecular beam epitaxy GaAs. Miller, Jeffrey N.; Collins, Douglas M.; Moll, Nicolas J. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p960 

    After molecular beam epitaxy GaAs is grown at 585 °C, substantial diffusion of Be occurs during growth of subsequent layers or during subsequent in situ annealing at 700 °C. By using an order of magnitude larger As4 flux than commonly used during growth and annealing, we were able to lower...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics