Dual-mode microwave/radio frequency plasma deposition of dielectric thin films

Martinu, L.; Klemberg-Sapieha, J. E.; Wertheimer, M. R.
June 1989
Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2645
Academic Journal
Thin films have been deposited in a ‘‘dual frequency mode’’ plasma, in which differing amounts of radio frequency (rf, 13.56 MHz) power were applied to the substrate, while sustaining the plasma with constant microwave (2.45 GHz) power. We report results pertaining to deposition of silicon oxide and organosilicon thin films. The rf-induced negative dc self-bias voltage is shown to affect plasma-chemical reactions, causing very significant changes in the deposition rate, film composition, and dielectric properties of the resulting materials. This provides a powerful new technique for producing ‘‘tailored’’ films, while preserving the important advantages of high deposition rates and low substrate temperatures.


Related Articles

  • The growth of microcrystalline silicon oxide thin films studied by in situ plasma diagnostics. Kirner, S.; Gabriel, O.; Stannowski, B.; Rech, B.; Schlatmann, R. // Applied Physics Letters;2/4/2013, Vol. 102 Issue 5, p051906 

    The crystallinity and refractive index of microcrystalline silicon oxide (μc-SiOx:H) n-layers and their dependence on the pressure and radio frequency power during the deposition process is correlated with plasma properties derived from in situ diagnostics. From process gas depletion...

  • Raising the barriers. Nikkola, Juha // European Coatings Journal;Jan2011, Issue 1, p41 

    The article discusses the development of new surface activation techniques and functional coatings to address the increasing demands on more superior and multifunctional products. It highlights the sol-gel method which is conceived to be beneficial in producing transparent thin films. It also...

  • Improved surface nitridation of SiO2 thin films in low ammonia pressures. Ronda, A.; Glachant, A.; Plossu, C.; Balland, B. // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p171 

    Surface nitridation of thin SiO2 films (130 Å) has been achieved in low ammonia pressures (P≤10-1 mbar) by thermal activation (900 °C≤T≤1050 °C) or by electron-beam-enhanced reaction at room temperature. In the first case, the nitridation rate increases with P, T, and...

  • Erbium–thulium interaction in broadband infrared luminescent silicon-rich silicon oxide. Seo, Se-Young; Shin, Jung H.; Bae, Byeong-Soo; Park, Namkyoo; Penninkhof, J. J.; Polman, A. // Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3445 

    The Er-Tm interaction and its effect on the luminescence from Er-Tm codoped silicon-rich silicon oxide (SRSO) is investigated. Er and Tm ions were implanted into SRSO films, which consist of Si nanocrystals embedded in a SiO[sub 2] matrix. A broad luminescence spectrum extending from 1.5 to 2.0...

  • Electron-cyclotron-resonant microwave plasma system for thin-film deposition. Mejia, S. R.; McLeod, R. D.; Kao, K. C.; Card, H. C. // Review of Scientific Instruments;Mar86, Vol. 57 Issue 3, p493 

    A new microwave plasma method for the fabrication of solid films is presented. Microwave power is efficiently transferred to the plasma, resulting in minimal power requirements. Uniform silicon films have been fabricated with a wide range of optical and electronic properties, at high deposition...

  • Deposition mechanism of SiO2 film by low-pressure microwave-discharged plasma. Murakami, Eiichi; Kimura, Shin-ichiro; Miyake, Kiyoshi; Warabisako, Terunori; Wada, Yasuo // Journal of Applied Physics;10/1/1987, Vol. 62 Issue 7, p3063 

    Presents a study that qualitatively investigated the deposition mechanism of SiO[sub2] film by low-pressure microwave-discharged plasma. Background on plasma-enhanced chemical vapor deposition; Analysis of the spatial distribution of film thickness; Assessment of the results of etch rate...

  • Reduction of the interfacial Si displacement of ultrathin SiO[sub 2] on Si(100) formed by atmospheric-pressure ozone. Kurokawa, Akira; Nakamura, Ken; Ichimura, Shingo; Ishimura, Shingo; Moon, Dae Won; Dae Won Moon // Applied Physics Letters;1/24/2000, Vol. 76 Issue 4 

    We examined the structure around the interface of SiO[sub 2] and Si using medium-energy ion scattering spectroscopy (MEIS) to investigate the interfacial Si displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate...

  • Reflection–absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H[sub 8]Si[sub 8]O[sub 12] clusters. Nicholson, K. T.; Zhang, K. Z.; Banaszak Holl, M. M.; McFeely, F. R. // Journal of Applied Physics;6/1/2002, Vol. 91 Issue 11, p9043 

    Reflection-absorption infrared spectroscopy has been employed to observe Si-H bonds within a model, ultrathin silicon oxide. Upon heating a monolayer of H[sub 8]Si[sub 8]O[sub 12]/Si(100 - 2 × 1 to 700 °C, Si-H bonds as a part of HSiO[sub 3] entities are still detected within the oxide...

  • Epitaxial crystallization of amorphous SiO[sub 2] films deposited on single-crystalline... Roccaforte, F.; Dhar, S.; Lieb, K.P.; Harbsmeier, F. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p2903 

    Reports on the solid-phase epitaxial growth of thin amorphous silicon oxide films deposited by electron gun evaporation in single-crystalline alpha-quartz substrates achieved by high-dose Cs(supra +)-ion implantation. Thin amorphous layer produced by silicon-ion implantation on alpha-quartz...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics