Impurity aggregation at individual dislocations in GaAs observed by means of a simultaneous electron beam induced current and cathodoluminescence technique

Eckstein, M.; Jakubowicz, A.; Bode, M.; Habermeier, H.-U.
June 1989
Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2659
Academic Journal
Using simultaneous measurements of electron beam induced current and cathodoluminescence intensity it is possible to distinguish between different contributions to signal magnitude and contrast at defects. In this letter we report on the application of this technique to investigate the role of impurity aggregation and defect decoration on the recombination behavior of dislocations in GaAs. In the experiment described here we diffused copper into the crystal. We observed an increase of signal contrasts and changes in the contrast profiles. With the help of computer simulations these experimental results can be interpreted as a homogeneous decoration of dislocations, the formation of precipitates at the dislocations, and a reduced minority-carrier diffusion length in the bulk.


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