Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

Samarth, N.; Luo, H.; Furdyna, J. K.; Qadri, S. B.; Lee, Y. R.; Ramdas, A. K.; Otsuka, N.
June 1989
Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2680
Academic Journal
We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 Ã…, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.


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