TITLE

Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy

AUTHOR(S)
Lee, Henry P.; Liu, Xiaoming; Wang, Shyh; George, Thomas; Weber, Eicke R.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2695
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs films were grown on Si substrates by a two-step method in which a thin buffer layer was first deposited using a modulated molecular beam epitaxy (MBE) technique followed by a thick layer grown by conventional molecular beam epitaxy. The film quality was evaluated using 77 K photoluminescence (PL) and double-crystal x-ray rocking curves. It was found that GaAs films grown in this way have a superior crystalline quality compared to the films prepared by normal two-step MBE. To investigate the nucleation of this buffer layer, thin GaAs layers (150 Ã…) were grown on Si substrates and examined by plan-view and cross-sectional transmission electron microscope. A thin, two-dimensional nucleation pattern was found in this sample, in clear contrast to the three-dimensional nucleation islands found in samples grown by conventional MBE. This showed conclusively that modulated beam molecular beam epitaxy resulted in a more uniform and two-dimensional nucleation during the initial stage of the growth as speculated earlier and is believed to be the reason for the improvement of the crystalline quality of the overgrown layer.
ACCESSION #
9831751

 

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