Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy

Lee, Henry P.; Liu, Xiaoming; Wang, Shyh; George, Thomas; Weber, Eicke R.
June 1989
Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2695
Academic Journal
GaAs films were grown on Si substrates by a two-step method in which a thin buffer layer was first deposited using a modulated molecular beam epitaxy (MBE) technique followed by a thick layer grown by conventional molecular beam epitaxy. The film quality was evaluated using 77 K photoluminescence (PL) and double-crystal x-ray rocking curves. It was found that GaAs films grown in this way have a superior crystalline quality compared to the films prepared by normal two-step MBE. To investigate the nucleation of this buffer layer, thin GaAs layers (150 Ã…) were grown on Si substrates and examined by plan-view and cross-sectional transmission electron microscope. A thin, two-dimensional nucleation pattern was found in this sample, in clear contrast to the three-dimensional nucleation islands found in samples grown by conventional MBE. This showed conclusively that modulated beam molecular beam epitaxy resulted in a more uniform and two-dimensional nucleation during the initial stage of the growth as speculated earlier and is believed to be the reason for the improvement of the crystalline quality of the overgrown layer.


Related Articles

  • Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures. Galiev, G. B.; Imamov, R. M.; Medvedev, B. K.; Mokerov, V. G.; Mukhamedzhanov, É. Kh.; Pashaev, É. M.; Cheglakov, V. B. // Semiconductors;Oct97, Vol. 31 Issue 10, p1003 

    The results of an investigation of the structural perfection of GaAs epitaxial films grown by molecular-beam epitaxy at low growth temperatures (240-300 °C) and various As/Ga flux ratios (from 3 to 13) are presented. Diffraction reflection curves display characteristic features for the...

  • New approach to growth of high-quality GaAs layers on Si substrates. Varrio, J.; Asonen, H.; Salokatve, A.; Pessa, M.; Rauhala, E.; Keinonen, J. // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1801 

    GaAs films were grown by molecular beam epitaxy (MBE) on Si (100) substrates using a two-step growth process of a 300 °C GaAs buffer layer followed by a 600 °C device layer. The films were examined by Rutherford backscattering and x-ray diffraction methods. A significant reduction in the...

  • Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1-xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate. Hoenk, Michael E.; Chen, Howard Z.; Yariv, Amnon; Morkoç, Hadis; Vahala, Kerry J. // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1347 

    Cathodoluminescence scanning electron microscopy is used to study AlxGa1-x As epilayers grown on a nonplanar substrate by molecular beam epitaxy. Grooves parallel to the [011] direction were etched in an undoped GaAs substrate. Growth on such grooves proceeds on particular facet planes. We find...

  • Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe. Rajakarunanayake, Y.; Cole, B. H.; McCaldin, J. O.; Chow, D. H.; Söderström, J. R.; McGill, T. C.; Jones, C. M. // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1217 

    We report the successful growth of ZnTe on nearly lattice-matched III-V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy. In situ reflection high-energy electron diffraction measurements showed the characteristic streak patterns indicative of...

  • Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxy. Maguire, J.; Murray, R.; Newman, R. C.; Beall, R. B.; Harris, J. J. // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p516 

    Silicon-doped GaAs grown by molecular beam epitaxy has been characterized by Hall measurements, infrared local vibrational mode (LVM) absorption, secondary ion and laser source mass spectroscopy. Highly doped samples with [Si]∼3×1019 cm-3 show only a low carrier concentration of...

  • Calculation of Radius of Curvature for Strained Layer Structure and Fabrication of Semiconductor Microtubes on GaAs Substrate. Silambarasan, Murugesan; Saravanan, Shanmugam // Journal of Materials Science & Engineering;2010, Vol. 4 Issue 10, p20 

    Fabrication of semiconductor microtube is a novel research to integrate the optoelectronic devices. The radius of curvature (R) against the indium gallium arsenide (InxGa1-xAs) composition for various thicknesses of indium gallium arsenide (InGaAs) and gallium arsenide (GaAs) layers have been...

  • Molecular beam epitaxy of GaAs on Si-on-insulator. Wenhua Zhu; Yuehi Yu; Chenglu Lin; Aizhen Li; Shichang Zou; Hemment, P.L.F. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p210 

    Investigates the growth of gallium arsenide films on silicon-on-insulator by molecular beam epitaxy. Use of Rutherford backscattering and x-ray double-crystal diffraction; Relation between crystal quality and film thickness; Determination of the refractive index profiles.

  • Low-temperature GaAs epitaxial growth using electron-cyclotron resonance/metalorganic-molecular-beam epitaxy. Tanaka, Yoshimitsu; Kunitsugu, Yasuhiro; Suemune, Ikuo; Honda, Yoshiaki; Kan, Yasuo; Yamanishi, Masamichi // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2778 

    Develops a low-temperature gallium arsenide growth method called electron-cyclotron resonance (ECR) molecular-beam epitaxy. Advantage of the method; Significance of low-temperature epitaxial growth of compound semiconductor films; Growth condition of gallium arsenide epitaxy by ECR-metalorganic...

  • Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Fujiwara, K.; Nishikawa, Y.; Tokuda, Y.; Nakayama, T. // Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p701 

    Effects of substrate preparation conditions, i.e., wet chemical and ultrahigh vacuum cleaning preparations, on GaAs oval defects grown by molecular beam epitaxy (MBE) were investigated. It is found that, with our MBE system, the presence of the smaller (<10 μm) ovally shaped defects without...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics