Band-gap shifts in silicon-germanium heterojunction bipolar transistors

Sturm, J. C.; Prinz, E. J.; Garone, P. M.; Schwartz, P. V.
June 1989
Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2707
Academic Journal
The band gap of the base of Si1-xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.


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