Epitaxial growth and critical current density of thin films of YBa2Cu3O7-x on LaAlO3 substrates

Mogro-Campero, A.; Turner, L. G.; Hall, E. L.; Garbauskas, M. F.; Lewis, N.
June 1989
Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2719
Academic Journal
Thin films of the high-temperature superconductor YBa2 Cu3 O7-x have been produced on (100) LaAlO3 substrates by coevaporation and furnace annealing. A 14-μm-wide and 400-μm-long constriction patterned on a 0.8-μm-thick film had a zero resistance transition temperature of 90 K, a transition width of 1.5 K, and a critical current density of 8×104 A cm-2 at 77 K. Although x-ray diffraction shows a definite c-axis alignment normal to the substrate plane, further analysis reveals that c-axis alignment in the substrate plane is also present. The detailed microstructural picture is revealed by transmission electron microscopy: a continuous layer, about 0.2 μm thick adjacent to the substrate, with c axis normal to the substrate plane, and the remaining top portion of the film, with the c axis in the film plane. In spite of the bilayer structure, the film remains epitaxial (the axes of the superconductor are parallel to the <100> directions of the substrate).


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