Optoelectronic measurement of picosecond turn-on delay in InGaAsP laser diodes

Adomaitis, E.; Blixt, P.; Krotkus, A.
June 1989
Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2622
Academic Journal
A tandem photoconductive switch, producing nearly rectangular electrical pulses with variable duration from 25 ps to 1 ns, was used for accurate turn-on delay measurements of a laser diode. Maximum electrical pulse amplitude was 75 V and both rise and fall times were 15 ps. The shortest delay recorded was 60 ps. The carrier lifetime at the lasing threshold was found to be 3.89 ns.


Related Articles

  • Amorphous silicon photoconductive diode. Hack, M.; Shur, M.; Tsai, C. C. // Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p96 

    In this letter we describe the operation of a new high-speed, high-gain amorphous silicon sensor. The device gain originates from the photoconductive properties of amorphous silicon but good light to dark sensitivity is obtained by suppressing the sensor dark current by means of a lightly p-type...

  • Detectors shoot for terahertz processing speeds. Lerner, Eric J. // Laser Focus World;Apr2001, Vol. 37 Issue 4, p147 

    Deals with the data communications links between computer processors and memory or other processors. Incompatibility of materials used in high-speed detector with silicon complementary metal-oxide semiconductor (CMOS) detectors; Details on the avalanche photodiode; Problem to overcome when...

  • Status of the endcap BGO calorimeter of the CMD-3 detector. Akhmetshin, R. R.; Grigoriev, D. N.; Kazanin, V. F.; Tsaregorodtsev, S. M.; Yudin, Yu. V. // Physics of Atomic Nuclei;Mar2009, Vol. 72 Issue 3, p477 

    The electromagnetic endcap BGO calorimeter of the CMD-3 detector is ready for experiments at the new e+ e− collider VEPP-2000. Light readout is performed by silicon photodiodes. A thermalcontrol system that is able to maintain the calorimeter temperature at a level of 12 ±1°C was...

  • Two-photon photoconductivity in SiC photodiodes and its application to autocorrelation measurements of femtosecond optical pulses. Feurer, T.; Glass, A.; Sauerbrey, R. // Applied Physics B: Lasers & Optics;1997, Vol. 65 Issue 2, p295 

    By measuring the output signal of a SiC photodiode under short-pulse illumination with photon energies below the band gap, it was found that the response is determined by a second-order process, i.e., two-photon induced photoconductivity. This nonlinearity is suitable for realizing...

  • Silicon photodiode detects 1330- and 1550-nm wavelengths.  // Laser Focus World;Sep2005, Vol. 41 Issue 9, p11 

    Reports that researchers at Harvard University have developed a silicon (Si)-microstructuring process that allowed them to fabricate Si photodiodes that respond to telecommunications wavelengths of 1330 and 1550 nanometer, which have energies that lie below the bandgap of Si. Irradiation of Si...

  • A study of vacuum-ultraviolet stability of silicon photodiodes. Zabrodsky, V.; Belik, V.; Aruev, P.; Ber, B.; Bobashev, S.; Petrenko, M.; Sukhanov, V. // Technical Physics Letters;Sep2012, Vol. 38 Issue 9, p812 

    Silicon photodiodes have been tested for resistance to vacuum-ultraviolet radiation at 121.6 nm. The responsivities of the p- n and n- p photodiodes under study were found to degrade by tens of percent at a VUV radiation dose on the order of tens of mJ/cm. The effect of reversible photocurrent...

  • Switching with PIN diodes. Carr, Joseph J. // Popular Electronics;Dec94, Vol. 11 Issue 12, p40 

    Discusses switching of radio and audio frequencies with PIN diodes. PIN diodes as switches in either series or parallel modes; Uses for switch attenuators, filters and amplifiers; Schematic diagrams of circuits.

  • Characteristic Analysis of the Response to Picosecond Pulsed Laser Radiation of a Silicon p-i-n Photodiode. DOU, X-A.; SUN, X.-Q. // Lasers in Engineering (Old City Publishing);2013, Vol. 24 Issue 3/4, p167 

    To study the characteristic response of a silicon p-i-n photodiode to picosecond pulsed laser radiation, the physical model was established and the response characteristic was analysed using quasi-three-dimensional simulation technology. The results indicate that a silicon p-i-n photodiode could...

  • Measurement and comparison of silicon p-i-n-photodiodes with ac impedance at different voltages. Özden, S.; Bayhan, H.; Dönmez, A.; Bayhan, M. // Semiconductors;Jul2008, Vol. 42 Issue 7, p834 

    The dark alternating current (ac) parameters of commercially available silicon p-i-n-photodiodes are measured and compared at room temperature both in forward and reverse bias using the impedance spectroscopy technique. The ac behavior of the photodiodes is found to be almost the same. For bias...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics