TITLE

High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy

AUTHOR(S)
Hafich, M. J.; Quigley, J. H.; Owens, R. E.; Robinson, G. Y.; Li, Du; Otsuka, N.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/26/1989, Vol. 54 Issue 26, p2686
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality quantum wells of GaAs confined by barriers of InGaP have been grown by gas-source molecular beam epitaxy. High-resolution lattice images obtained with transmission electron microscopy of single quantum wells reveal high quality interfaces for both the normal InGaP/GaAs and the inverted GaAs/InGaP interface. Multiple-line low-temperature photoluminescence emission is observed for the thinnest GaAs quantum well. The range of well thicknesses examined was 0.6–5.2 nm, with the smallest well producing a quantum confinement energy shift of over 410 meV, corresponding to photoluminescence emission at 640 nm (1.94 eV) from GaAs.
ACCESSION #
9831715

 

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