TITLE

Full-aperture, high-power semiconductor laser

AUTHOR(S)
Waters, R. G.; Dalby, R. J.; Emanuel, M. A.
PUB. DATE
June 1989
SOURCE
Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2534
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A single quantum well laser with a 2-mm-wide aperture has exhibited low threshold current density and nearly 100% packing fraction. The lateral structure relies on epitaxial growth on a corrugated substrate to frustrate radiative lateral processes and it thus eliminates the need for isolation at least for incoherent operation. Threshold current densities are comparable to those for low-power devices, and slope efficiencies remain undiminished to our current limit where 10.7 W per facet is attained. The aperture size is limited only by our fixturing arrangement.
ACCESSION #
9831693

 

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