Conductance characteristics of ballistic one-dimensional channels controlled by a gate electrode

Hirayama, Y.; Saku, T.
June 1989
Applied Physics Letters;6/19/1989, Vol. 54 Issue 25, p2556
Academic Journal
Ballistic one-dimensional channels are fabricated using a highly resistive region induced by focused Ga ion beam scanning. Both wide and narrow channels are fabricated using this process. Transport characteristics of these channels are controlled by a voltage applied to the Schottky electrode on the channel. The channels show multiple-step structures in their transport characteristics at low temperature when the gate voltage is varied. This is probably due to the ballistic transport through one-dimensional quantized electron states. For narrower channels, the number of the observed steps becomes fewer. Instead, the structures are observable at higher temperature.


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